PART |
Description |
Maker |
HIN232CP FN3138 |
16 PDIP, 0 70, 5V RS232 DUAL TRANSCE From old datasheet system
|
Intersil
|
BR93A46RFJ-W BR93A46FJ-W BR93A46F-W BR93A46RF-W BR |
Microwire BUS 1Kbit(64 x 16bit) EEPROM
|
ROHM[Rohm]
|
BR93L56RFJ-W BR93L56RFV-W BR93L56RFVJ-W |
Microwire BUS 2Kbit(128 x 16bit) EEPROM
|
Rohm
|
AK4550VT AKM4550 AKD4550 AK4550 AK4550VTP-E2 AK535 |
Enchanced dual bit 20 bit ADC SPECIALTY CONSUMER CIRCUIT, PDSO16 JT 41C 41#20 PIN PLUG LOW POWER & SMALL PACKAGE 16BIT CODEC Low Power & Samll Package 16bit ## CODEC LOW POWER & SMALL PACKAGE 16BIT CODEC
|
Asahi Kasei Microsystems Co.,Ltd AKM[Asahi Kasei Microsystems] Asahi Kasei Microsystem...
|
K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 H |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power 4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power
|
Hynix Semiconductor
|
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
AKD4550-E |
16bit A/D and D/A converter
|
Asahi Kasei Microsystems
|
TB62706BFG TB62706BNG |
16BIT SHIFT REGISTER
|
Toshiba
|